找到VGS-25-XX相关的规格书共376,084
型号厂商描述数据手册替代料参考价格
FQD3P50TMMurata Manufacturing Co., Ltd.类型:P沟道;漏源电压(Vdss):500V;连续漏极电流(Id):2.1A;功率(Pd):50W;导通电阻(RDS(on)@Vgs,Id):4.9Ω@10V,1.05A;阈值电压(Vgs(th)@Id):5V@250uA;获取价格
FDP8880Murata Manufacturing Co., Ltd.类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):54A;功率(Pd):55W;导通电阻(RDS(on)@Vgs,Id):11.6mΩ@10V,40A;阈值电压(Vgs(th)@Id):2.5V@250uA;获取价格
FDP6030BLMurata Manufacturing Co., Ltd.类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):40A;功率(Pd):60W;导通电阻(RDS(on)@Vgs,Id):18mΩ@10V,20A;阈值电压(Vgs(th)@Id):3V@250uA;获取价格
FDP3672Murata Manufacturing Co., Ltd.类型:N沟道;漏源电压(Vdss):105V;连续漏极电流(Id):41A;功率(Pd):135W;导通电阻(RDS(on)@Vgs,Id):33mΩ@10V,41A;阈值电压(Vgs(th)@Id):4V@250uA;获取价格
FDBL9401-F085Murata Manufacturing Co., Ltd.类型:N沟道;漏源电压(Vdss):40V;连续漏极电流(Id):300A;功率(Pd):429W;导通电阻(RDS(on)@Vgs,Id):650mΩ@10V,80A;阈值电压(Vgs(th)@Id):4V@250μA;获取价格
FCH043N60Murata Manufacturing Co., Ltd.类型:N沟道;漏源电压(Vdss):600V;连续漏极电流(Id):75A;功率(Pd):592W;导通电阻(RDS(on)@Vgs,Id):43mΩ@10V,38A;阈值电压(Vgs(th)@Id):3.5V@250uA;获取价格
IRF540NSTRPBF-VBVBsemi Electronics Co. Ltd类型:N沟道;漏源电压(Vdss):100V;连续漏极电流(Id):45A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):30mΩ@10V,45A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-;获取价格
IRF9Z24NS-VBVBsemi Electronics Co. Ltd类型:P沟道;漏源电压(Vdss):60V;连续漏极电流(Id):35A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):48mΩ@10V,35A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-;获取价格
IPB120N06NG-VBVBsemi Electronics Co. Ltd类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):60A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):12mΩ@10V,60A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-;获取价格
STB30NF10T4-VBVBsemi Electronics Co. Ltd类型:N沟道;漏源电压(Vdss):100V;连续漏极电流(Id):45A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):30mΩ@10V,45A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-;获取价格
PHB32N06-VBVBsemi Electronics Co. Ltd类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):50A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):23mΩ@10V,50A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-;获取价格
KY2305AShenzhen Hanjingyuan Electronics Co., Ltd类型:-20V -4.1A P-Channel Mosfet● RDS(ON) ≤ 45m ( 35m Typ.)@VGS=-4.5V● RDS(ON) ≤ 70m ( 38m Typ.)@VGS=-2.5V● RDS(ON) ≤ 90m ( 50m Typ.)@VGS=-1.8V● Load Switch for Portable Devices● DC/DC Converter获取价格
AP2309AGN-VBVBsemi Electronics Co. Ltd类型:P沟道;漏源电压(Vdss):30V;连续漏极电流(Id):5.6A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):46mΩ@10V,5.6A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-;获取价格
CES2314-VBVBsemi Electronics Co. Ltd类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):6.5A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):30mΩ@10V,6.5A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-;获取价格
RSQ045N03TR-VBVBsemi Electronics Co. Ltd类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):6A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):30mΩ@10V,6A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-;获取价格
STP30NF20-VBVBsemi Electronics Co. Ltd类型:N沟道;漏源电压(Vdss):200V;连续漏极电流(Id):40A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):60mΩ@10V,40A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-;获取价格
APM4015PUC-TRL-VBVBsemi Electronics Co. Ltd类型:P沟道;漏源电压(Vdss):40V;连续漏极电流(Id):50A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):12mΩ@10V,50A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-;获取价格
IRFR9120NTRPBF-VBVBsemi Electronics Co. Ltd类型:P沟道;漏源电压(Vdss):100V;连续漏极电流(Id):8.8A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):250mΩ@10V,8.8A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-;获取价格
VBE1202VBsemi Electronics Co. Ltd类型:N沟道;漏源电压(Vdss):20V;连续漏极电流(Id):120A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):2mΩ@10V,120A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-;获取价格
ZXMN10A07ZTA-VBVBsemi Electronics Co. Ltd类型:N沟道;漏源电压(Vdss):100V;连续漏极电流(Id):4.2A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):102mΩ@10V,4.2A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-;获取价格