| AP3415AI | Taiwan APM Technology Limited By Share Ltd | 类型:P沟道;漏源电压(Vdss):20V;连续漏极电流(Id):4.2A;功率(Pd):1.4W;导通电阻(RDS(on)@Vgs,Id):37mΩ@4.5V,4A;阈值电压(Vgs(th)@Id):1V@250uA;栅极电荷(Qg@Vgs):10nC@4.5V;输入电容(Ciss@Vds):939pF@10V;反向传输电容(Crss@Vds):111pF@10V;工作温度:-55℃~+150℃@(Tj); | | | 获取价格 |
| APJ14N65D | Taiwan APM Technology Limited By Share Ltd | 类型:N沟道;漏源电压(Vdss):650V;连续漏极电流(Id):8A;功率(Pd):25.5W;导通电阻(RDS(on)@Vgs,Id):560mΩ@10V,3.2A;阈值电压(Vgs(th)@Id):3.3V@250uA;栅极电荷(Qg@Vgs):11nC@10V;输入电容(Ciss@Vds):438pF@100V;反向传输电容(Crss@Vds):1.32pF@100V;工作温度:-55℃~+150℃@(Tj); | | | 获取价格 |
| AP50P10D | Taiwan APM Technology Limited By Share Ltd | 类型:P沟道;漏源电压(Vdss):100V;连续漏极电流(Id):50A;功率(Pd):104W;导通电阻(RDS(on)@Vgs,Id):46mΩ@4.5V,8A; | | | 获取价格 |
| APG12N10D | Taiwan APM Technology Limited By Share Ltd | 类型:N沟道;漏源电压(Vdss):100V;连续漏极电流(Id):12A;功率(Pd):17W;导通电阻(RDS(on)@Vgs,Id):105mΩ@10V,5A;阈值电压(Vgs(th)@Id):2V@250uA;栅极电荷(Qg@Vgs):4.3nC@10V;输入电容(Ciss@Vds):206.1pF@50V;反向传输电容(Crss@Vds):1.4pF@50V;工作温度:-55℃~+150℃@(Tj); | | | 获取价格 |
| AP60N04D | Taiwan APM Technology Limited By Share Ltd | 类型:N沟道;漏源电压(Vdss):40V;连续漏极电流(Id):60A;功率(Pd):34.7W;导通电阻(RDS(on)@Vgs,Id):14.5mΩ@10V,20A;阈值电压(Vgs(th)@Id):1.5V@250uA;栅极电荷(Qg@Vgs):10.7nC@4.5V;输入电容(Ciss@Vds):1.314nF@15V;反向传输电容(Crss@Vds):88pF@15V;工作温度:-55℃~+150℃@(Tj); | | | 获取价格 |
| APG40N10D | Taiwan APM Technology Limited By Share Ltd | | | | 获取价格 |
| AP60P02D | Taiwan APM Technology Limited By Share Ltd | 类型:P沟道;漏源电压(Vdss):20V;连续漏极电流(Id):60A;功率(Pd):60W;导通电阻(RDS(on)@Vgs,Id):8Ω@4.5V,10A;阈值电压(Vgs(th)@Id):650mV@250uA;栅极电荷(Qg@Vgs):63nC@4.5V;输入电容(Ciss@Vds):1.6nF@15V;反向传输电容(Crss@Vds):300pF@15V;工作温度:-55℃~+150℃@(Tj); | | | 获取价格 |
| AP30N10D | Taiwan APM Technology Limited By Share Ltd | | | | 获取价格 |
| AP2302BI | Taiwan APM Technology Limited By Share Ltd | 20V N沟道增强型MOSFET | | | 获取价格 |
| AP6N40D | Taiwan APM Technology Limited By Share Ltd | 类型:N沟道;漏源电压(Vdss):400V;连续漏极电流(Id):6A;功率(Pd):32.9W;导通电阻(RDS(on)@Vgs,Id):800mΩ@10V,3.5A;阈值电压(Vgs(th)@Id):3.5V@250uA;栅极电荷(Qg@Vgs):19nC@10V;输入电容(Ciss@Vds):700pF@25V;反向传输电容(Crss@Vds):12pF@25V;工作温度:-55℃~+150℃@(Tj); | | | 获取价格 |
| AP30P10D | Taiwan APM Technology Limited By Share Ltd | 类型:P沟道;漏源电压(Vdss):100V;连续漏极电流(Id):30A;功率(Pd):54W;导通电阻(RDS(on)@Vgs,Id):78mΩ@10V,10A;阈值电压(Vgs(th)@Id):1.7V@250μA;栅极电荷(Qg@Vgs):44.5nC@10V;输入电容(Ciss@Vds):3029pF@20V;反向传输电容(Crss@Vds):76pF@20V;工作温度:-55℃~+150℃@(Tj); | | | 获取价格 |
| AP2311MI | Taiwan APM Technology Limited By Share Ltd | 类型:P沟道;漏源电压(Vdss):12V;连续漏极电流(Id):7A;功率(Pd):1.6W;导通电阻(RDS(on)@Vgs,Id):19mΩ@4.5V,5.2A; | | | 获取价格 |
| AP60N03F | Taiwan APM Technology Limited By Share Ltd | | | | 获取价格 |
| AP90P01D | Taiwan APM Technology Limited By Share Ltd | | | | 获取价格 |
| AP5N20D-H | Taiwan APM Technology Limited By Share Ltd | 类型:N沟道;漏源电压(Vdss):200V;连续漏极电流(Id):5A;功率(Pd):46W;导通电阻(RDS(on)@Vgs,Id):530mΩ@10V,2.5A;阈值电压(Vgs(th)@Id):3.1V@250uA;栅极电荷(Qg@Vgs):18nC@10V;输入电容(Ciss@Vds):228pF@25V;反向传输电容(Crss@Vds):17pF@25V;工作温度:-55℃~+150℃@(Tj); | | | 获取价格 |
| AP40P04D | Taiwan APM Technology Limited By Share Ltd | 类型:P沟道;漏源电压(Vdss):40V;连续漏极电流(Id):40A;功率(Pd):25W;导通电阻(RDS(on)@Vgs,Id):15mΩ@10V,30A; | | | 获取价格 |
| AP3P10MI | Taiwan APM Technology Limited By Share Ltd | MOSFETs SOT23-3L P-沟道 VDS=100V ID=3A | | | 获取价格 |
| AP15P06D | Taiwan APM Technology Limited By Share Ltd | | | | 获取价格 |
| AP20N06D | Taiwan APM Technology Limited By Share Ltd | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):20A;功率(Pd):31.3W;导通电阻(RDS(on)@Vgs,Id):33mΩ@10V,15A; | | | 获取价格 |
| AP5N10BI | Taiwan APM Technology Limited By Share Ltd | 类型:N沟道;漏源电压(Vdss):100V;连续漏极电流(Id):5A;功率(Pd):3.1W;导通电阻(RDS(on)@Vgs,Id):105mΩ@10V,4A;阈值电压(Vgs(th)@Id):1.7V@250uA;栅极电荷(Qg@Vgs):3.57nC@10V;输入电容(Ciss@Vds):182pF@50V;反向传输电容(Crss@Vds):3.6pF@50V;工作温度:-55℃~+150℃@(Tj); | | | 获取价格 |
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