ASDM540G-R | Ascend Frequency Devices | 类型:N沟道;漏源电压(Vdss):100V;连续漏极电流(Id):33A;功率(Pd):70W;导通电阻(RDS(on)@Vgs,Id):31mΩ@10V,12A; | | | 获取价格 |
ASDM40N100P-T | Ascend Frequency Devices | | | | 获取价格 |
ASDM40N60KQ-R | Ascend Frequency Devices | ASDM40N60KQ-R | | | 获取价格 |
ASDM2301ZA/SOT23 | Ascend Frequency Devices | ASDM2301ZA/SOT23 | | | 获取价格 |
ASPL1117-3.3-DT-R | Ascend Frequency Devices | ASPL1117-3.3-DT-R | | | 获取价格 |
ASDM6802ZC-R | Ascend Frequency Devices | 类型:2个N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):4.5A;功率(Pd):1.2W;导通电阻(RDS(on)@Vgs,Id):33mΩ@10V,4.5A;阈值电压(Vgs(th)@Id):1.5V@250uA;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):245pF@15V;反向传输电容(Crss@Vds):32pF@15V;工作温度:-55℃~+150℃@(Tj); | | | 获取价格 |
ASPL431AZA/SOT23 | Ascend Frequency Devices | 电压基准类型:并联;输出类型:可调;输入电压:40V;输出电压:2.5V~36V;输出电流:-;精度:-;温度系数:-;静态电流:-;最小阴极电流调节:400uA;动态阻抗:100mΩ;工作温度:-25℃~+125℃@(Ta); | | | 获取价格 |
ASPL78L05DI-R | Ascend Frequency Devices | 输出类型:-; | | | 获取价格 |
ASDM3401ZB-R | Ascend Frequency Devices | 类型:P沟道;漏源电压(Vdss):30V;连续漏极电流(Id):4.2A;功率(Pd):1.4W;导通电阻(RDS(on)@Vgs,Id):65mΩ@10V,4A;阈值电压(Vgs(th)@Id):1.5V@250uA;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):954pF@15V;反向传输电容(Crss@Vds):77pF@15V;工作温度:-55℃~+150℃@(Tj); | | | 获取价格 |
ASDM3415ZA-R | Ascend Frequency Devices | | | | 获取价格 |
ASDM60P12KQ-R | Ascend Frequency Devices | 类型:P沟道;漏源电压(Vdss):60V;连续漏极电流(Id):12A;功率(Pd):50W;导通电阻(RDS(on)@Vgs,Id):62mΩ@10V,14A; | | | 获取价格 |
ASDM60N30KQ-R | Ascend Frequency Devices | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):30A;功率(Pd):55W;导通电阻(RDS(on)@Vgs,Id):23mΩ@10V,15A;阈值电压(Vgs(th)@Id):1.6V@250uA;栅极电荷(Qg@Vgs):25nC@10V;输入电容(Ciss@Vds):1.562nF@25V;反向传输电容(Crss@Vds):66.8pF@25V;工作温度:-55℃~+175℃@(Tj); | | | 获取价格 |
ASDM40N80KQ-R | Ascend Frequency Devices | 类型:N沟道;漏源电压(Vdss):40V;连续漏极电流(Id):80A;功率(Pd):65W;导通电阻(RDS(on)@Vgs,Id):5.5mΩ@4.5V,35A;阈值电压(Vgs(th)@Id):2.5V@250uA;栅极电荷(Qg@Vgs):29nC@10V;输入电容(Ciss@Vds):3.027nF@20V;反向传输电容(Crss@Vds):155pF@20V;工作温度:+150℃@(Tj); | | | 获取价格 |
ASDM100N34KQ-R | Ascend Frequency Devices | 类型:N沟道;漏源电压(Vdss):100V;连续漏极电流(Id):34A;功率(Pd):63W;导通电阻(RDS(on)@Vgs,Id):24mΩ@10V,20A;阈值电压(Vgs(th)@Id):1.5V@250uA;栅极电荷(Qg@Vgs):23nC@10V;输入电容(Ciss@Vds):1.5nF@25V;反向传输电容(Crss@Vds):252pF@25V;工作温度:-55℃~+175℃@(Tj); | | | 获取价格 |
ASP8120ZC-R | Ascend Frequency Devices | | | | 获取价格 |
ASDM30P09ZB-R | Ascend Frequency Devices | ASDM30P09ZB-R | | | 获取价格 |
ASOPD4580N/DIP8 | Ascend Frequency Devices | | | | 获取价格 |
ASDM3020S-R | Ascend Frequency Devices | ASDM3020S-R | | | 获取价格 |
ASDM30N100KQ-R | Ascend Frequency Devices | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):100A;功率(Pd):79W;导通电阻(RDS(on)@Vgs,Id):3.3mΩ@10V,30A; | | | 获取价格 |
ASDM30N120KQ-R | Ascend Frequency Devices | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):120A;功率(Pd):45W;导通电阻(RDS(on)@Vgs,Id):2.5mΩ@10V,30A;阈值电压(Vgs(th)@Id):1.5V@250uA;栅极电荷(Qg@Vgs):63nC@10V;输入电容(Ciss@Vds):2.921nF@15V;反向传输电容(Crss@Vds):416pF@15V;工作温度:-55℃~+150℃@(Tj); | | | 获取价格 |