| 1 | ASDM30N120KQ-R | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):120A;功率(Pd):45W;导通电阻(RDS(on)@Vgs,Id):2.5mΩ@10V,30... | 下载 | Ascend Frequency Devices |
| 2 | ASDM60N45KQ-R | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):45A;功率(Pd):80W;导通电阻(RDS(on)@Vgs,Id):12mΩ@10V,20A;... | 下载 | Ascend Frequency Devices |
| 3 | ASDM68N80KQ-R | 类型:N沟道;漏源电压(Vdss):68V;连续漏极电流(Id):80A;功率(Pd):120W;导通电阻(RDS(on)@Vgs,Id):7.7mΩ@10V,30... | 下载 | Ascend Frequency Devices |
| 4 | ASDM60N80KQ-R | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):80A;功率(Pd):108W;导通电阻(RDS(on)@Vgs,Id):6mΩ@10V,30A;... | 下载 | Ascend Frequency Devices |
| 5 | ASDM30P100KQ-R | 类型:P沟道;漏源电压(Vdss):30V;连续漏极电流(Id):100A;功率(Pd):109W;导通电阻(RDS(on)@Vgs,Id):5mΩ@10V,30A... | 下载 | Ascend Frequency Devices |
| 6 | ASDM100R160NKQ-R | 类型:N沟道;漏源电压(Vdss):100V;连续漏极电流(Id):45A;功率(Pd):72W;导通电阻(RDS(on)@Vgs,Id):14mΩ@10V,20A... | 下载 | Ascend Frequency Devices |
| 7 | AOD478-MS | 类型:N沟道;漏源电压(Vdss):100V;连续漏极电流(Id):20A;功率(Pd):34.7W; | 下载 | Mason semiconductor |
| 8 | AOD424-MS | 类型:N沟道;漏源电压(Vdss):20V;连续漏极电流(Id):60A;功率(Pd):60W;导通电阻(RDS(on)@Vgs,Id):6.5mΩ@4.5V,60... | 下载 | Mason semiconductor |
| 9 | AOD2606-MS | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):80A;功率(Pd):104W;导通电阻(RDS(on)@Vgs,Id):6mΩ@10V,45A;... | 下载 | Mason semiconductor |
| 10 | AP50P20K | 类型:2个N沟道;漏源电压(Vdss):20V;连续漏极电流(Id):50A;功率(Pd):50W;导通电阻(RDS(on)@Vgs,Id):6.6mΩ@4.5V,... | 下载 | Shenzhen.Quan Li Semiconductor Co., Ltd. |
| 11 | AP1310K | 类型:N沟道;漏源电压(Vdss):100V;连续漏极电流(Id):50A;功率(Pd):68W;导通电阻(RDS(on)@Vgs,Id):14mΩ@10V,20A... | 下载 | Shenzhen.Quan Li Semiconductor Co., Ltd. |
| 12 | ASDM20N20KQ-R | 类型:N沟道;漏源电压(Vdss):20V;连续漏极电流(Id):20A;功率(Pd):32W;导通电阻(RDS(on)@Vgs,Id):20mΩ@4.5V,8A;... | 下载 | Ascend Frequency Devices |
| 13 | AP15N10D | 类型:N沟道;漏源电压(Vdss):100V;连续漏极电流(Id):19.3A;功率(Pd):30W;导通电阻(RDS(on)@Vgs,Id):65mΩ@10V,5... | 下载 | Taiwan APM Technology Limited By Share Ltd |
| 14 | AP100N03AD | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):100A;功率(Pd):46W;导通电阻(RDS(on)@Vgs,Id):4.8mΩ@10V,30... | 下载 | Taiwan APM Technology Limited By Share Ltd |
| 15 | APM4015PUC-TRL-VB | 类型:P沟道;漏源电压(Vdss):40V;连续漏极电流(Id):50A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):12mΩ@10V,50A;阈值... | 下载 | VBsemi Electronics Co. Ltd |
| 16 | AP9T16AGH-HF | 类型:N沟道;漏源电压(Vdss):20V;连续漏极电流(Id):19.5A;功率(Pd):12.5W;导通电阻(RDS(on)@Vgs,Id):20mΩ@4.5V... | 下载 | APEC |
| 17 | AD-DTA124EM | | 下载 | Rubycon Corporation |
| 18 | AD-DTC114TM | | 下载 | Rubycon Corporation |
| 19 | AD-DTA114EM | | 下载 | Rubycon Corporation |
| 20 | A733 | 晶体管类型:PNP;集射极击穿电压(Vceo):50V;集电极电流(Ic):100mA;功率(Pd):250mW;集电极截止电流(Icbo):100nA;集电极-发... | 下载 | Rubycon Corporation |
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