| ASDM540G-R | Ascend Frequency Devices | 类型:N沟道;漏源电压(Vdss):100V;连续漏极电流(Id):33A;功率(Pd):70W;导通电阻(RDS(on)@Vgs,Id):31mΩ@10V,12A; | | | 获取价格 |
| ASDM40N100P-T | Ascend Frequency Devices | | | | 获取价格 |
| ASDM40N60KQ-R | Ascend Frequency Devices | ASDM40N60KQ-R | | | 获取价格 |
| ASDM2301ZA/SOT23 | Ascend Frequency Devices | ASDM2301ZA/SOT23 | | | 获取价格 |
| ASPL1117-3.3-DT-R | Ascend Frequency Devices | ASPL1117-3.3-DT-R | | | 获取价格 |
| ASDM6802ZC-R | Ascend Frequency Devices | 类型:2个N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):4.5A;功率(Pd):1.2W;导通电阻(RDS(on)@Vgs,Id):33mΩ@10V,4.5A;阈值电压(Vgs(th)@Id):1.5V@250uA;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):245pF@15V;反向传输电容(Crss@Vds):32pF@15V;工作温度:-55℃~+150℃@(Tj); | | | 获取价格 |
| ASPL431AZA/SOT23 | Ascend Frequency Devices | 电压基准类型:并联;输出类型:可调;输入电压:40V;输出电压:2.5V~36V;输出电流:-;精度:-;温度系数:-;静态电流:-;最小阴极电流调节:400uA;动态阻抗:100mΩ;工作温度:-25℃~+125℃@(Ta); | | | 获取价格 |
| ASPL78L05DI-R | Ascend Frequency Devices | 输出类型:-; | | | 获取价格 |
| ASDM30N100KQ-R | Ascend Frequency Devices | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):100A;功率(Pd):79W;导通电阻(RDS(on)@Vgs,Id):3.3mΩ@10V,30A; | | | 获取价格 |
| ASDM30N120KQ-R | Ascend Frequency Devices | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):120A;功率(Pd):45W;导通电阻(RDS(on)@Vgs,Id):2.5mΩ@10V,30A;阈值电压(Vgs(th)@Id):1.5V@250uA;栅极电荷(Qg@Vgs):63nC@10V;输入电容(Ciss@Vds):2.921nF@15V;反向传输电容(Crss@Vds):416pF@15V;工作温度:-55℃~+150℃@(Tj); | | | 获取价格 |
| ASDM60N45KQ-R | Ascend Frequency Devices | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):45A;功率(Pd):80W;导通电阻(RDS(on)@Vgs,Id):12mΩ@10V,20A;阈值电压(Vgs(th)@Id):1.5V@250uA;栅极电荷(Qg@Vgs):30nC@10V;输入电容(Ciss@Vds):1.92nF@25V;反向传输电容(Crss@Vds):70pF@25V;工作温度:-55℃~+175℃@(Tj); | | | 获取价格 |
| ASDM68N80KQ-R | Ascend Frequency Devices | 类型:N沟道;漏源电压(Vdss):68V;连续漏极电流(Id):80A;功率(Pd):120W;导通电阻(RDS(on)@Vgs,Id):7.7mΩ@10V,30A;阈值电压(Vgs(th)@Id):4V@250uA;栅极电荷(Qg@Vgs):70nC@10V;输入电容(Ciss@Vds):3.36nF@34V;反向传输电容(Crss@Vds):540pF@34V;工作温度:-55℃~+175℃@(Tj); | | | 获取价格 |
| ASDM60N80KQ-R | Ascend Frequency Devices | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):80A;功率(Pd):108W;导通电阻(RDS(on)@Vgs,Id):6mΩ@10V,30A;阈值电压(Vgs(th)@Id):3V@250uA;栅极电荷(Qg@Vgs):90nC@10V;输入电容(Ciss@Vds):3.36nF@30V;反向传输电容(Crss@Vds):209pF@30V;工作温度:-55℃~+175℃@(Tj); | | | 获取价格 |
| ASDM30P100KQ-R | Ascend Frequency Devices | 类型:P沟道;漏源电压(Vdss):30V;连续漏极电流(Id):100A;功率(Pd):109W;导通电阻(RDS(on)@Vgs,Id):5mΩ@10V,30A;阈值电压(Vgs(th)@Id):1.5V@250uA;栅极电荷(Qg@Vgs):30nC@10V;输入电容(Ciss@Vds):6.56nF@15V;反向传输电容(Crss@Vds):700pF@15V;工作温度:-55℃~+175℃@(Tj); | | | 获取价格 |
| ASDM100R160NKQ-R | Ascend Frequency Devices | 类型:N沟道;漏源电压(Vdss):100V;连续漏极电流(Id):45A;功率(Pd):72W;导通电阻(RDS(on)@Vgs,Id):14mΩ@10V,20A;阈值电压(Vgs(th)@Id):1.8V@250uA;栅极电荷(Qg@Vgs):16nC@10V;输入电容(Ciss@Vds):1.135nF@50V;反向传输电容(Crss@Vds):18pF@50V;工作温度:-55℃~+150℃@(Tj); | | | 获取价格 |
| ASDM20N20KQ-R | Ascend Frequency Devices | 类型:N沟道;漏源电压(Vdss):20V;连续漏极电流(Id):20A;功率(Pd):32W;导通电阻(RDS(on)@Vgs,Id):20mΩ@4.5V,8A;阈值电压(Vgs(th)@Id):1V@250uA;栅极电荷(Qg@Vgs):10nC@4.5V;输入电容(Ciss@Vds):515pF@15V;反向传输电容(Crss@Vds):80pF@15V;工作温度:-55℃~+150℃@(Tj); | | | 获取价格 |
| ASOPD4580S-R | Ascend Frequency Devices | | | | 获取价格 |
| ASPL431AZA-R | Ascend Frequency Devices | 可调精密并联稳压器 Vo=2.5V~36V SOT23 | | | 获取价格 |
| ASDM2305ZA-R | Ascend Frequency Devices | | | | 获取价格 |
| ASDM30P30CTD-R | Ascend Frequency Devices | | | | 获取价格 |
工商网监