| ASDM60N45KQ-R | Ascend Frequency Devices | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):45A;功率(Pd):80W;导通电阻(RDS(on)@Vgs,Id):12mΩ@10V,20A;阈值电压(Vgs(th)@Id):1.5V@250uA;栅极电荷(Qg@Vgs):30nC@10V;输入电容(Ciss@Vds):1.92nF@25V;反向传输电容(Crss@Vds):70pF@25V;工作温度:-55℃~+175℃@(Tj); | | | 获取价格 |
| ASDM68N80KQ-R | Ascend Frequency Devices | 类型:N沟道;漏源电压(Vdss):68V;连续漏极电流(Id):80A;功率(Pd):120W;导通电阻(RDS(on)@Vgs,Id):7.7mΩ@10V,30A;阈值电压(Vgs(th)@Id):4V@250uA;栅极电荷(Qg@Vgs):70nC@10V;输入电容(Ciss@Vds):3.36nF@34V;反向传输电容(Crss@Vds):540pF@34V;工作温度:-55℃~+175℃@(Tj); | | | 获取价格 |
| ASDM60N80KQ-R | Ascend Frequency Devices | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):80A;功率(Pd):108W;导通电阻(RDS(on)@Vgs,Id):6mΩ@10V,30A;阈值电压(Vgs(th)@Id):3V@250uA;栅极电荷(Qg@Vgs):90nC@10V;输入电容(Ciss@Vds):3.36nF@30V;反向传输电容(Crss@Vds):209pF@30V;工作温度:-55℃~+175℃@(Tj); | | | 获取价格 |
| ASDM30P100KQ-R | Ascend Frequency Devices | 类型:P沟道;漏源电压(Vdss):30V;连续漏极电流(Id):100A;功率(Pd):109W;导通电阻(RDS(on)@Vgs,Id):5mΩ@10V,30A;阈值电压(Vgs(th)@Id):1.5V@250uA;栅极电荷(Qg@Vgs):30nC@10V;输入电容(Ciss@Vds):6.56nF@15V;反向传输电容(Crss@Vds):700pF@15V;工作温度:-55℃~+175℃@(Tj); | | | 获取价格 |
| ASDM100R160NKQ-R | Ascend Frequency Devices | 类型:N沟道;漏源电压(Vdss):100V;连续漏极电流(Id):45A;功率(Pd):72W;导通电阻(RDS(on)@Vgs,Id):14mΩ@10V,20A;阈值电压(Vgs(th)@Id):1.8V@250uA;栅极电荷(Qg@Vgs):16nC@10V;输入电容(Ciss@Vds):1.135nF@50V;反向传输电容(Crss@Vds):18pF@50V;工作温度:-55℃~+150℃@(Tj); | | | 获取价格 |
| ASDM20N20KQ-R | Ascend Frequency Devices | 类型:N沟道;漏源电压(Vdss):20V;连续漏极电流(Id):20A;功率(Pd):32W;导通电阻(RDS(on)@Vgs,Id):20mΩ@4.5V,8A;阈值电压(Vgs(th)@Id):1V@250uA;栅极电荷(Qg@Vgs):10nC@4.5V;输入电容(Ciss@Vds):515pF@15V;反向传输电容(Crss@Vds):80pF@15V;工作温度:-55℃~+150℃@(Tj); | | | 获取价格 |
| ASOPD4580S-R | Ascend Frequency Devices | | | | 获取价格 |
| ASPL431AZA-R | Ascend Frequency Devices | 可调精密并联稳压器 Vo=2.5V~36V SOT23 | | | 获取价格 |
| ASDM2305ZA-R | Ascend Frequency Devices | | | | 获取价格 |
| ASDM30P30CTD-R | Ascend Frequency Devices | | | | 获取价格 |
| ASDM3050KQ-R | Ascend Frequency Devices | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):50A;功率(Pd):60W;导通电阻(RDS(on)@Vgs,Id):9mΩ@10V,25A;阈值电压(Vgs(th)@Id):1.4V@250uA;栅极电荷(Qg@Vgs):23nC@10V;输入电容(Ciss@Vds):2nF@15V;反向传输电容(Crss@Vds):160pF@15V;工作温度:-55℃~+175℃@(Tj); | | | 获取价格 |
| ASDM3416EZA-R | Ascend Frequency Devices | N型MOS管@@VDS20V,ID7ARDS(on),Typ@VGS=4.5V16mR | | | 获取价格 |
| ASDM7002EZA-R | Ascend Frequency Devices | | | | 获取价格 |
| ASDM20N12ZB-R | Ascend Frequency Devices | 类型:N沟道;漏源电压(Vdss):20V;连续漏极电流(Id):12A;功率(Pd):1.14W;导通电阻(RDS(on)@Vgs,Id):11.5mΩ@4.5V,5A;阈值电压(Vgs(th)@Id):950mV@250uA;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):1.035nF@20V;反向传输电容(Crss@Vds):150pF@20V;工作温度:+150℃@(Tj); | | | 获取价格 |
| ASDM60N50KQ-R | Ascend Frequency Devices | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):50A;功率(Pd):62.5W;导通电阻(RDS(on)@Vgs,Id):8.5mΩ@10V,20A;阈值电压(Vgs(th)@Id):2.5V@250uA;栅极电荷(Qg@Vgs):18nC@10V;输入电容(Ciss@Vds):880pF@30V;反向传输电容(Crss@Vds):16pF@30V;工作温度:-55℃~+150℃@(Tj); | | | 获取价格 |
| ASDM20N60KQ-R | Ascend Frequency Devices | 类型:N沟道;漏源电压(Vdss):20V;连续漏极电流(Id):60A;功率(Pd):60W;导通电阻(RDS(on)@Vgs,Id):5mΩ@4.5V,25A;阈值电压(Vgs(th)@Id):700mV@250uA;栅极电荷(Qg@Vgs):18nC@8V;输入电容(Ciss@Vds):980pF@15V;反向传输电容(Crss@Vds):80pF@15V;工作温度:-55℃~+150℃@(Tj); | | | 获取价格 |
| ASDM30N75KQ-R | Ascend Frequency Devices | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):75A;功率(Pd):75W;导通电阻(RDS(on)@Vgs,Id):4.8mΩ@10V,20A;阈值电压(Vgs(th)@Id):1.6V@250uA;栅极电荷(Qg@Vgs):11.1nC@4.5V;输入电容(Ciss@Vds):1.56nF@25V;反向传输电容(Crss@Vds):178pF@25V;工作温度:-55℃~+175℃@(Tj); | | | 获取价格 |
| ASDM100N15KQ-R | Ascend Frequency Devices | 类型:N沟道;漏源电压(Vdss):100V;连续漏极电流(Id):15A;功率(Pd):55W;导通电阻(RDS(on)@Vgs,Id):95mΩ@10V,10A;阈值电压(Vgs(th)@Id):1.6V@250uA;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):932pF@50V;反向传输电容(Crss@Vds):21pF@50V;工作温度:-55℃~+175℃@(Tj); | | | 获取价格 |
| ASDM100R750PKQ-R | Ascend Frequency Devices | 类型:P沟道;漏源电压(Vdss):100V;连续漏极电流(Id):20A;功率(Pd):72W;导通电阻(RDS(on)@Vgs,Id):75mΩ@10V,10A;阈值电压(Vgs(th)@Id):1.8V@250uA;栅极电荷(Qg@Vgs):9.7nC@10V;输入电容(Ciss@Vds):1.051nF@50V;反向传输电容(Crss@Vds):25pF@50V;工作温度:-55℃~+150℃@(Tj); | | | 获取价格 |
| ASDM4406S-R | Ascend Frequency Devices | ASDM4406S-R | | | 获取价格 |
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