| CRSD082N10L2 | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):100V;连续漏极电流(Id):78A;功率(Pd):101W;导通电阻(RDS(on)@Vgs,Id):8.6mΩ@10V,50A;阈值电压(Vgs(th)@Id):2.2V@250uA; | | | 获取价格 |
| CRJQ80N65F | Wuxi China Resources Microelectronics Limited | MOSFETs N-CH 650V 43A 77mΩ TO247-3L | | | 获取价格 |
| CRXU10D065G2 | Wuxi China Resources Microelectronics Limited | CRXU10D065G2 | | | 获取价格 |
| CRTS045N06N | Wuxi China Resources Microelectronics Limited | MOSFETs N-沟道 VDS=60V VGS=±25V ID=120A RDS(ON)=4.5mΩ@60A,10V TO263 | | | 获取价格 |
| PC817B | Wuxi China Resources Microelectronics Limited | | | | 获取价格 |
| PC817C | Wuxi China Resources Microelectronics Limited | | | | 获取价格 |
| CRST060N10N | Wuxi China Resources Microelectronics Limited | MOSFETs N-Channel 100V 120A TO220-3 3V@250µA 227W | | | 获取价格 |
| CS5N60A8H | Wuxi China Resources Microelectronics Limited | CS5N60A8H | | | 获取价格 |
| CRTM024N03L2-G | Wuxi China Resources Microelectronics Limited | MOS管 N-Channel VDS=30V VGS=±20V ID=60A RDS(ON)=2.2mΩ@10V DFN_5X6MM | | | 获取价格 |
| CS10N70FA9D | Wuxi China Resources Microelectronics Limited | CS10N70FA9D | | | 获取价格 |
| CRSS038N08N | Wuxi China Resources Microelectronics Limited | CRSS038N08N | | | 获取价格 |
| CS5755MTO | Wuxi China Resources Microelectronics Limited | 电机驱动器及控制器 SOP-23 600V 15A Power module | | | 获取价格 |
| CS5735MTO | Wuxi China Resources Microelectronics Limited | 三相无刷直流电机驱动电路，VCC=15V | | | 获取价格 |
| CRST041N08N | Wuxi China Resources Microelectronics Limited | SkyMOS1 N-MOSFET 85V, 3.4mΩ, 120A TO220 | | | 获取价格 |
| CRSS037N10N | Wuxi China Resources Microelectronics Limited | TO263-3 | | | 获取价格 |
| CRSS063N08N | Wuxi China Resources Microelectronics Limited | SkyMOS1 N-MOSFET 85V, 5.6mΩ, 80A TO263 | | | 获取价格 |
| IPT2508-CEA | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT2508-CEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT2506-BEA | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT2506-BEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT20Q08-TEA | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT20Q08-TEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT20Q08-CEA | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT20Q08-CEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
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