| IPT1208-TEB | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT1208-TEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT08Q08-CEA | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT08Q08-CEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT08Q08-BED | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT08Q08-BED - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT08Q06-CEI | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT08Q06-CEI - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT08Q06-CEF | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT08Q06-CEF - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0808-CEI | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0808-CEI - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0808-CEB | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0808-CEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0806-CEI | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0806-CEI - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0806-BEF | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0806-BEF - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0806-BEA | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0806-BEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT04Q08-TED | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT04Q08-TED - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT04Q08-TEB | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT04Q08-TEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT04Q08-TEA | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT04Q08-TEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT04Q08-DED | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT04Q08-DED - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT04Q08-AED | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT04Q08-AED - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT04Q06-SEI | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT04Q06-SEI - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT04Q06-DEI | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT04Q06-DEI - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT04Q06-AEI | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT04Q06-AEI - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT04Q06-AEB | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT04Q06-AEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0408-35D | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0408-35D - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
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