找到“ID8155H”相关的规格书共8,200个
| 型号 | 厂商 | 描述 | 数据手册 | 替代料 | 参考价格 |
|---|---|---|---|---|---|
| FHD100N03A | Guangzhou Feihong Semiconductor Co., Ltd. | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):100A;功率(Pd):39W;导通电阻(RDS(on)@Vgs,Id):5.5mΩ@10V,30A;阈值电压(Vgs(th)@Id):2V@250uA; | 获取价格 | ||
| FHP10N65A | Guangzhou Feihong Semiconductor Co., Ltd. | 类型:N沟道;漏源电压(Vdss):650V;连续漏极电流(Id):10A;功率(Pd):156W;导通电阻(RDS(on)@Vgs,Id):900mΩ@10V,5A;阈值电压(Vgs(th)@Id):4V@250uA; | 获取价格 | ||
| FHF10N65B | Guangzhou Feihong Semiconductor Co., Ltd. | 类型:N沟道;漏源电压(Vdss):650V;连续漏极电流(Id):10A;功率(Pd):50W;导通电阻(RDS(on)@Vgs,Id):900mΩ@10V,5A;阈值电压(Vgs(th)@Id):5V@250uA; | 获取价格 | ||
| FHF8N60A | Guangzhou Feihong Semiconductor Co., Ltd. | 类型:N沟道;漏源电压(Vdss):600V;连续漏极电流(Id):8A;功率(Pd):54W;导通电阻(RDS(on)@Vgs,Id):1.3Ω@10V,4A;阈值电压(Vgs(th)@Id):4V@250uA; | 获取价格 | ||
| CS2N60FA9H | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):600V;连续漏极电流(Id):2A;功率(Pd):24W;导通电阻(RDS(on)@Vgs,Id):4.5Ω@10V,1A;阈值电压(Vgs(th)@Id):4V@250uA; | 获取价格 | ||
| CS8N60FA9H | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):600V;连续漏极电流(Id):8A;功率(Pd):45W;导通电阻(RDS(on)@Vgs,Id):1.2Ω@10V,4A;阈值电压(Vgs(th)@Id):4V@250uA; | 获取价格 | ||
| CS2N65A4 | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):650V;连续漏极电流(Id):2A;功率(Pd):35W;导通电阻(RDS(on)@Vgs,Id):5Ω@10V,1A;阈值电压(Vgs(th)@Id):4V@250uA; | 获取价格 | ||
| CS20N50A8H | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):500V;连续漏极电流(Id):20A;功率(Pd):230W;导通电阻(RDS(on)@Vgs,Id):300mΩ@10V,10A;阈值电压(Vgs(th)@Id):4V@250uA; | 获取价格 | ||
| CS7N80FA9 | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):800V;连续漏极电流(Id):7A;功率(Pd):48W;导通电阻(RDS(on)@Vgs,Id):1.8Ω@10V,3.5A;阈值电压(Vgs(th)@Id):4V@250uA; | 获取价格 | ||
| CS10N65FA9R | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):650V;连续漏极电流(Id):10A;功率(Pd):40W;导通电阻(RDS(on)@Vgs,Id):1Ω@10V,5A;阈值电压(Vgs(th)@Id):4V@250uA; | 获取价格 | ||
| CS100N08A8 | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):85V;连续漏极电流(Id):100A;功率(Pd):198W;导通电阻(RDS(on)@Vgs,Id):8.5mΩ@10V,50A;阈值电压(Vgs(th)@Id):4V@250uA; | 获取价格 | ||
| CS2N65FA9 | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):650V;连续漏极电流(Id):2A;功率(Pd):27W;导通电阻(RDS(on)@Vgs,Id):4.5Ω@10V,1A;阈值电压(Vgs(th)@Id):4V@250uA; | 获取价格 | ||
| CS12N60FA9H | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):600V;连续漏极电流(Id):12A;功率(Pd):55W;导通电阻(RDS(on)@Vgs,Id):650mΩ@10V,6A;阈值电压(Vgs(th)@Id):4V@250uA; | 获取价格 | ||
| CS25N06C4 | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):25A;功率(Pd):36.2W;导通电阻(RDS(on)@Vgs,Id):29mΩ@10V,19A;阈值电压(Vgs(th)@Id):2V@250uA; | 获取价格 | ||
| HP640 | HL | 类型:N沟道;漏源电压(Vdss):200V;连续漏极电流(Id):18A;功率(Pd):104W;导通电阻(RDS(on)@Vgs,Id):150mΩ@10V,9A;阈值电压(Vgs(th)@Id):4V@250uA; | 获取价格 | ||
| HF12N60 | HL | 类型:N沟道;漏源电压(Vdss):600V;连续漏极电流(Id):12A;功率(Pd):51W;导通电阻(RDS(on)@Vgs,Id):650mΩ@10V,6A;阈值电压(Vgs(th)@Id):4V@250uA; | 获取价格 | ||
| HB3710P | HL | 类型:N沟道;漏源电压(Vdss):100V;连续漏极电流(Id):70A;功率(Pd):200W;导通电阻(RDS(on)@Vgs,Id):20mΩ@10V,35A;阈值电压(Vgs(th)@Id):4V@250uA; | 获取价格 | ||
| BSC057N03LS G | Infineon Technologies | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| IAUC60N04S6L039 | Infineon Technologies | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| BSC079N03LSC G | Infineon Technologies | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 |
