| 1 | FP6277XR-G1 | 功能类型:升压型;同步整流:是;输出通道数:1;拓扑结构:升压式;输入电压:2.4V~4.5V;输出电压:5.3V;输出电流(最大值):-;开关频率:500kHz; | 下载 | AnalogySemi |
| 2 | FP7183XR-G1 | | 下载 | AnalogySemi |
| 3 | FP7103XR-LF | 28V，2A，320KHz | 下载 | AnalogySemi |
| 4 | FP7208AXR-G1 | 24V | 下载 | AnalogySemi |
| 5 | FD2H003BYR-G1 | 低功率霍尔传感器 | 下载 | AnalogySemi |
| 6 | FR152GP-TP | DIODE GPP FAST 1.5A DO-15 | 下载 | Micro Commercial Components |
| 7 | FR201GP-TP | DIODE GPP GAST 2A DO-15 | 下载 | Micro Commercial Components |
| 8 | FR203GP-TP | DIODE GPP GAST 2A DO-15 | 下载 | Micro Commercial Components |
| 9 | FR204 | 二极管配置:独立式;直流反向耐压(Vr):400V;平均整流电流(Io):2A;正向压降(Vf):1.3V@2A;反向电流(Ir):5uA@400V;反向恢复时间(... | 下载 | Chongqing Pingwei Technology (Group) Co., Ltd. |
| 10 | FQU5N60CTU | 类型:N沟道;漏源电压(Vdss):600V;连续漏极电流(Id):2.8A;功率(Pd):2.5W；49W;导通电阻(RDS(on)@Vgs,Id):2.5Ω@1... | 下载 | Murata Manufacturing Co., Ltd. |
| 11 | FDP027N08B-F102 | MOSFET N-CH 80V 120A TO220-3 | 下载 | ON Semiconductor |
| 12 | FCPF600N60ZL1 | MOSFET N-CH 600MOHM TO220F ZENER | 下载 | ON Semiconductor |
| 13 | FQP8P10 | 类型:P沟道;漏源电压(Vdss):100V;连续漏极电流(Id):8A;功率(Pd):65W;导通电阻(RDS(on)@Vgs,Id):530mΩ@10V,4A; | 下载 | Murata Manufacturing Co., Ltd. |
| 14 | FQP10N20C | 类型:N沟道;漏源电压(Vdss):200V;连续漏极电流(Id):9.5A;功率(Pd):72W;导通电阻(RDS(on)@Vgs,Id):360mΩ@10V,4... | 下载 | Murata Manufacturing Co., Ltd. |
| 15 | FDPF14N30 | 类型:N沟道;漏源电压(Vdss):300V;连续漏极电流(Id):14A;功率(Pd):35W;导通电阻(RDS(on)@Vgs,Id):290mΩ@10V,7A... | 下载 | Murata Manufacturing Co., Ltd. |
| 16 | FDP045N10A-F102 | 类型:N沟道;漏源电压(Vdss):100V;连续漏极电流(Id):120A;功率(Pd):263W;导通电阻(RDS(on)@Vgs,Id):4.5mΩ@10V,... | 下载 | Murata Manufacturing Co., Ltd. |
| 17 | FQP4N90C | 类型:N沟道;漏源电压(Vdss):900V;连续漏极电流(Id):4A;功率(Pd):140W;导通电阻(RDS(on)@Vgs,Id):4.2Ω@10V,2A;... | 下载 | Murata Manufacturing Co., Ltd. |
| 18 | FC4901 | | 下载 | Shenzhen guoxin jiapin semiconductor co., LTD |
| 19 | FCS520 | | 下载 | Shenzhen guoxin jiapin semiconductor co., LTD |
| 20 | FR5305-VB | 类型:P沟道;漏源电压(Vdss):60V;连续漏极电流(Id):50A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):20mΩ@10V,50A;阈值... | 下载 | VBsemi Electronics Co. Ltd |
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