找到“ID8155”相关的规格书共8,200个
| 型号 | 厂商 | 描述 | 数据手册 | 替代料 | 参考价格 |
|---|---|---|---|---|---|
| HYG420N06LR1D | HUAYI MICROELECTRONICS CO.,LTD. | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| HY1803C2 | HUAYI MICROELECTRONICS CO.,LTD. | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):80A;功率(Pd):52W;导通电阻(RDS(on)@Vgs,Id):3mΩ@10V,20A;阈值电压(Vgs(th)@Id):3V@250uA; | 获取价格 | ||
| FHP150N03C | Guangzhou Feihong Semiconductor Co., Ltd. | 类型:N沟道;漏源电压(Vdss):26V;连续漏极电流(Id):150A;功率(Pd):125W;导通电阻(RDS(on)@Vgs,Id):4mΩ@10V,40A;阈值电压(Vgs(th)@Id):3V@250uA; | 获取价格 | ||
| FHD4N65D | Guangzhou Feihong Semiconductor Co., Ltd. | 类型:N沟道;漏源电压(Vdss):650V;连续漏极电流(Id):4A;功率(Pd):49W;导通电阻(RDS(on)@Vgs,Id):2.8Ω@10V,2A;阈值电压(Vgs(th)@Id):4V@250uA; | 获取价格 | ||
| CEM3128 | CET-MOS Technology Corp. | 类型:2个N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):9A;功率(Pd):2W;导通电阻(RDS(on)@Vgs,Id):16mΩ@10V,9A;阈值电压(Vgs(th)@Id):3V@250uA; | 获取价格 | ||
| CS4N60A8HD | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):600V;连续漏极电流(Id):4A;功率(Pd):75W;导通电阻(RDS(on)@Vgs,Id):2.3Ω@10V,2A;阈值电压(Vgs(th)@Id):4V@250uA; | 获取价格 | ||
| CS20N65FA9H | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):650V;连续漏极电流(Id):20A;功率(Pd):85W;导通电阻(RDS(on)@Vgs,Id):500mΩ@10V,10A;阈值电压(Vgs(th)@Id):4V@250uA; | 获取价格 | ||
| CS12N65FA9R | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):650V;连续漏极电流(Id):12A;功率(Pd):42W;导通电阻(RDS(on)@Vgs,Id):800mΩ@10V,6A;阈值电压(Vgs(th)@Id):4V@250uA; | 获取价格 | ||
| CS10N80FA9D | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):800V;连续漏极电流(Id):10A;功率(Pd):60W;导通电阻(RDS(on)@Vgs,Id):900mΩ@10V,5A;阈值电压(Vgs(th)@Id):4V@250uA; | 获取价格 | ||
| CS1N60A1H | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):600V;连续漏极电流(Id):800mA;功率(Pd):3W;导通电阻(RDS(on)@Vgs,Id):15Ω@10V,400mA;阈值电压(Vgs(th)@Id):4V@250uA; | 获取价格 | ||
| CS6N60FA9H | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):600V;连续漏极电流(Id):6A;功率(Pd):34W;导通电阻(RDS(on)@Vgs,Id):1.7Ω@10V,3A;阈值电压(Vgs(th)@Id):4V@250uA; | 获取价格 | ||
| CS3205B8 | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):120A;功率(Pd):230W;导通电阻(RDS(on)@Vgs,Id):8mΩ@10V,50A;阈值电压(Vgs(th)@Id):4V@250uA; | 获取价格 | ||
| CS4N65A3HD | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):650V;连续漏极电流(Id):4A;功率(Pd):75W;导通电阻(RDS(on)@Vgs,Id):2.5Ω@10V,2A;阈值电压(Vgs(th)@Id):4V@250uA; | 获取价格 | ||
| CS4N60A3R | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):600V;连续漏极电流(Id):4A;功率(Pd):75W;导通电阻(RDS(on)@Vgs,Id):2.5Ω@10V,2A;阈值电压(Vgs(th)@Id):4V@250uA; | 获取价格 | ||
| CS460FA9H | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):500V;连续漏极电流(Id):20A;功率(Pd):85W;导通电阻(RDS(on)@Vgs,Id):300mΩ@10V,10A;阈值电压(Vgs(th)@Id):4V@250uA; | 获取价格 | ||
| CS16N06AE-G | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):16A;功率(Pd):3.1W;导通电阻(RDS(on)@Vgs,Id):10mΩ@10V,8A;阈值电压(Vgs(th)@Id):3V@250uA; | 获取价格 | ||
| CS1N60C1HD | Wuxi China Resources Microelectronics Limited | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| AO5404E-VB | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):20V;连续漏极电流(Id):700mA;功率(Pd):400mW;导通电阻(RDS(on)@Vgs,Id):270mΩ@4.5V,1A;阈值电压(Vgs(th)@Id):1V@250uA; | 获取价格 | ||
| GT025N06AT | Goford Semiconductor Co.,Ltd. | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):170A;功率(Pd):215W;导通电阻(RDS(on)@Vgs,Id):2.6mΩ;阈值电压(Vgs(th)@Id):1.6V; | 获取价格 | ||
| HD30N06 | HL | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 |
