| AGM015N10LL | AGM-SEMI Semiconductor Technology Co., Ltd | MOSFETs TOLL-8L N-沟道 VDS=100V IDD=300A | | | 获取价格 |
| AGM312M2 | AGM-SEMI Semiconductor Technology Co., Ltd | N+P沟道 30V 9A/-6.8A 3.2W(Tc) 18mΩ/40mΩ | | | 获取价格 |
| AGM306D | AGM-SEMI Semiconductor Technology Co., Ltd | N沟道 30V 60A 51W(Tc)5.7mΩ | | | 获取价格 |
| AGM402A1 | AGM-SEMI Semiconductor Technology Co., Ltd | MOS管 N-Channel VDS=40V VGS=±20V ID=140A RDS(ON)=3.1mΩ@4.5V DFN5X6-8 | | | 获取价格 |
| AGM405A | AGM-SEMI Semiconductor Technology Co., Ltd | MOS管 N-Channel VDS=40V VGS=±20V ID=72A RDS(ON)=7mΩ@4.5V DFN5X6-8 | | | 获取价格 |
| AGM420MA | AGM-SEMI Semiconductor Technology Co., Ltd | MOS管 N-Channel, P-Channel VDS=40V VGS=±20V ID=18A,-20A RDS(ON)=25mΩ，34mΩ@4.5V DFN5X6-8 | | | 获取价格 |
| AGM312M1 | AGM-SEMI Semiconductor Technology Co., Ltd | MOS管 N-Channel,P-Channel VDS=30V,-30V VGS=±20V ID=9A,-7.2A RDS(ON)=22mΩ,39mΩ@4.5V SOP8_150MIL | | | 获取价格 |
| AGM60P20R | AGM-SEMI Semiconductor Technology Co., Ltd | | | | 获取价格 |
| AGM6035A | AGM-SEMI Semiconductor Technology Co., Ltd | N沟道 60V 100A 83W(Tc) 2.8mΩ | | | 获取价格 |
| AGM425MD | AGM-SEMI Semiconductor Technology Co., Ltd | N+P沟道 40V 23A/-20A 27.8W(Tc) 18mΩ/32mΩ | | | 获取价格 |
| AGM420MC | AGM-SEMI Semiconductor Technology Co., Ltd | N+P沟道 40V 7.6A/-7.5A 2.5W(Tc)18mΩ/26mΩ | | | 获取价格 |
| AGM412MAP | AGM-SEMI Semiconductor Technology Co., Ltd | N+N沟道 40V 22A 35W(Tc) 13mΩ | | | 获取价格 |
| AGM1405C1 | AGM-SEMI Semiconductor Technology Co., Ltd | N沟道 40V 130A 105W(Tc) 3mΩ | | | 获取价格 |
| AGM310AP1 | AGM-SEMI Semiconductor Technology Co., Ltd | N沟道 30V 28A 41W(Tc)9.7mΩ | | | 获取价格 |
| AGM206D | AGM-SEMI Semiconductor Technology Co., Ltd | N沟道 20V 85A 72W(Tc)3.5mΩ | | | 获取价格 |
| AGP2401 | AGM-SEMI Semiconductor Technology Co., Ltd | 温湿度传感器 TO46 0.1mA 0.06% | | | 获取价格 |
| AGM402D | AGM-SEMI Semiconductor Technology Co., Ltd | MOS管 N-Channel VDS=40V VGS=±20V ID=120A RDS(ON)=3.1mΩ@4.5V TO252 | | | 获取价格 |
| AGM30P55D1 | AGM-SEMI Semiconductor Technology Co., Ltd | MOS管 P-Channel VDS=-30V VGS=±20V ID=-65A RDS(ON)=10mΩ@-4.5V TO252 | | | 获取价格 |
| AGM306AP | AGM-SEMI Semiconductor Technology Co., Ltd | MOS管 N-Channel VDS=30V VGS=±20V ID=46A RDS(ON)=9.5mΩ@4.5V DFN3.3X3.3-8 | | | 获取价格 |
| AGM310A | AGM-SEMI Semiconductor Technology Co., Ltd | 场效应管(MOSFET) 类型：N沟道 漏源电压(Vdss)：30V 连续漏极电流(Id)：28A 功率(Pd)：40W 导通电阻(RDS(on)@Vgs,Id)：9.7mΩ@10V,15A 阈值电压(Vgs(th)@Id)：1.6V@250uA 栅极电荷(Qg@Vgs)：16nC@10V 输入电容(Ciss@Vds)：0.85nF@15V ,Vds=30V Id=28A Rds=9.7mΩ,工作温度：-55℃~+150℃@(Tj) DFN5*6 ； | | | 获取价格 |
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