| CS100N03B4 | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):100A;功率(Pd):100W;导通电阻(RDS(on)@Vgs,Id):5.3mΩ@10V,50A;阈值电压(Vgs(th)@Id):3V@250uA; | | | 获取价格 |
| PC817MB | Wuxi China Resources Microelectronics Limited | 输入电压类型:DC;输出通道数:1;正向电压:1.2V;反向电压:6V;输出电流:50mA;接收端电压:80V;集射极饱和电压(Vce(sat)@Ic,IF):100mV@1mA,20mA;隔离电压(rms):5kV; | | | 获取价格 |
| CRST037N10N | Wuxi China Resources Microelectronics Limited | | | | 获取价格 |
| CRST049N08N | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):85V;连续漏极电流(Id):120A;功率(Pd):189W;导通电阻(RDS(on)@Vgs,Id):4.9mΩ@10V,50A;阈值电压(Vgs(th)@Id):4V@250uA; | | | 获取价格 |
| CS4N60A4R | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):600V;连续漏极电流(Id):4A;功率(Pd):75W;导通电阻(RDS(on)@Vgs,Id):2.5Ω@10V,2A;阈值电压(Vgs(th)@Id):4V@250uA; | | | 获取价格 |
| CS7N65FA9R | Wuxi China Resources Microelectronics Limited | | | | 获取价格 |
| CS7N65FA9D | Wuxi China Resources Microelectronics Limited | | | | 获取价格 |
| CS1N60A4H | Wuxi China Resources Microelectronics Limited | | | | 获取价格 |
| ITD08N65R | Wuxi China Resources Microelectronics Limited | ITD08N65R | | | 获取价格 |
| CS4N65A3R | Wuxi China Resources Microelectronics Limited | CS4N65A3R | | | 获取价格 |
| CS5752ATO | Wuxi China Resources Microelectronics Limited | 三相无刷直流电机驱动电路，VCC=15V，SOP-23H | | | 获取价格 |
| CS5765NGO | Wuxi China Resources Microelectronics Limited | CS5765NG 是一款高度集成、高可靠性的三相无刷直流电机驱动电路，主要应用于较低功率电机驱动，如风扇电机。其内置了 6 个快恢复 IGBT 和 3 个半桥 HVIC 栅极驱动电路。内部集成了欠压保护电路，提供了优异的保护和故障安全操作。由于每一相都有一个独立的负直流端，其电流可以分别单独检测。 | | | 获取价格 |
| CRSM034N06L2 | Wuxi China Resources Microelectronics Limited | SkyMOS2 N-MOSFET 60V, 2.8mΩ, 80A | | | 获取价格 |
| CRTT029N06N | Wuxi China Resources Microelectronics Limited | Trench N-MOSFET 60V, 2.3mΩ, 160A TO220 | | | 获取价格 |
| CS7N65A4R | Wuxi China Resources Microelectronics Limited | MOS管 N-Channel VDS=650V VGS=±30V ID=7A RDS(ON)=1.4Ω@10V TO252 | | | 获取价格 |
| IPT40Q06-CEH | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT40Q06-CEH - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT2508-DEH | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT2508-DEH - High current density due to double mesa technology; - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT2508-DEB | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT2508-DEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT2508-BEH | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT2508-BEH - High current density due to double mesa technology; - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT2508-BEA | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT2508-BEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
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