| CRSS046N08N | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):85V;连续漏极电流(Id):120A;功率(Pd):189W;导通电阻(RDS(on)@Vgs,Id):4.6mΩ@10V,50A;阈值电压(Vgs(th)@Id):4V@250uA; | | | 获取价格 |
| CS7N70A4R-G | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):700V;连续漏极电流(Id):7A;功率(Pd):120W;导通电阻(RDS(on)@Vgs,Id):1.15Ω@10V,3.5A;阈值电压(Vgs(th)@Id):4V@250uA; | | | 获取价格 |
| CS4N60A7HD | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):600V;连续漏极电流(Id):4A;功率(Pd):30W;导通电阻(RDS(on)@Vgs,Id):2.3Ω@10V,2A;阈值电压(Vgs(th)@Id):4V@250uA; | | | 获取价格 |
| CS3818EO | Wuxi China Resources Microelectronics Limited | | | | 获取价格 |
| CS25N10A4 | Wuxi China Resources Microelectronics Limited | MOSFETs N-Channel Vdss=100V Id=25A Pd=56.8W | | | 获取价格 |
| CRTD063N04L | Wuxi China Resources Microelectronics Limited | CRTD063N04L | | | 获取价格 |
| CS1N60A4H | Wuxi China Resources Microelectronics Limited | CS1N60A4H | | | 获取价格 |
| CRTS095N12N | Wuxi China Resources Microelectronics Limited | CRTS095N12N | | | 获取价格 |
| CRTD030N03L | Wuxi China Resources Microelectronics Limited | CRTD030N03L | | | 获取价格 |
| CS4N60A3HD | Wuxi China Resources Microelectronics Limited | CS4N60A3HD | | | 获取价格 |
| PC817C | Wuxi China Resources Microelectronics Limited | PC817C | | | 获取价格 |
| CRSS082N15N | Wuxi China Resources Microelectronics Limited | MOS管 N-Channel VDS=150V VGS=±20V ID=120A RDS(ON)=8.2mΩ@10V TO263 | | | 获取价格 |
| CRST033N08N | Wuxi China Resources Microelectronics Limited | TO220 | | | 获取价格 |
| SKD502T | Wuxi China Resources Microelectronics Limited | SkyMOS1 N-MOSFET 85V, 4.6mΩ, 120A TO220 | | | 获取价格 |
| CRSS042N10N | Wuxi China Resources Microelectronics Limited | TO263-3 | | | 获取价格 |
| CRTD055N03L | Wuxi China Resources Microelectronics Limited | 沟槽N-MOSFET 30V，4.3米Ω, 58A至252 | | | 获取价格 |
| CS9N20A4R | Wuxi China Resources Microelectronics Limited | MOS管 N-Channel VDS=200V VGS=±30V ID=9A RDS(ON)=240mΩ TO252 | | | 获取价格 |
| PC817SC | Wuxi China Resources Microelectronics Limited | 6V 50mA | | | 获取价格 |
| IPT40Q06-TEH | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT40Q06-TEH - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT4006-XXH | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT4006-XXH - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
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