找到“TH1386”相关的规格书共6,488个
| 型号 | 厂商 | 描述 | 数据手册 | 替代料 | 参考价格 |
|---|---|---|---|---|---|
| CS10N65FA9HD | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):650V;连续漏极电流(Id):10A;功率(Pd):50W;导通电阻(RDS(on)@Vgs,Id):850mΩ@10V,5A;阈值电压(Vgs(th)@Id):4V@250uA; | 获取价格 | ||
| CS150N03A8 | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):150A;功率(Pd):100W;导通电阻(RDS(on)@Vgs,Id):3.5mΩ@10V,50A;阈值电压(Vgs(th)@Id):3V@250uA; | 获取价格 | ||
| CS4N65FA9HD | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):650V;连续漏极电流(Id):4A;功率(Pd):30W;导通电阻(RDS(on)@Vgs,Id):2.5Ω@10V,2A;阈值电压(Vgs(th)@Id):4V@250uA; | 获取价格 | ||
| CS12N60FA9R | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):600V;连续漏极电流(Id):12A;功率(Pd):42W;导通电阻(RDS(on)@Vgs,Id):750mΩ@10V,6A;阈值电压(Vgs(th)@Id):4V@250uA; | 获取价格 | ||
| CS1N60A3H | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):600V;连续漏极电流(Id):800mA;功率(Pd):25W;导通电阻(RDS(on)@Vgs,Id):15Ω@10V,400mA;阈值电压(Vgs(th)@Id):4V@250uA; | 获取价格 | ||
| CS45N06A4 | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):45A;功率(Pd):54.3W;导通电阻(RDS(on)@Vgs,Id):16mΩ@10V,20A;阈值电压(Vgs(th)@Id):2V@250uA; | 获取价格 | ||
| CS630A8H | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):200V;连续漏极电流(Id):9A;功率(Pd):83W;导通电阻(RDS(on)@Vgs,Id):280mΩ@10V,5.4A;阈值电压(Vgs(th)@Id):4V@250uA; | 获取价格 | ||
| CS3N90A3H1-G | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):900V;连续漏极电流(Id):3A;功率(Pd):75W;导通电阻(RDS(on)@Vgs,Id):5.5Ω@10V,1.5A;阈值电压(Vgs(th)@Id):4V@250uA; | 获取价格 | ||
| 2KK5016 | GUANGDONG KEXIN INDUSTRIAL CO.,LTD | 类型:N沟道;漏源电压(Vdss):20V;连续漏极电流(Id):238mA;功率(Pd):300W;导通电阻(RDS(on)@Vgs,Id):3Ω@4.5V,10mA;阈值电压(Vgs(th)@Id):1.5V@100μA; | 获取价格 | ||
| AS6385 | Anbon Semiconductor Co., Ltd. | 类型:P沟道;漏源电压(Vdss):60V;连续漏极电流(Id):3.5A;功率(Pd):1.4W;导通电阻(RDS(on)@Vgs,Id):85mΩ@10V,3A;阈值电压(Vgs(th)@Id):3V@250uA; | 获取价格 | ||
| AS4435S | Anbon Semiconductor Co., Ltd. | 类型:P沟道;漏源电压(Vdss):30V;连续漏极电流(Id):11A;功率(Pd):3.1W;导通电阻(RDS(on)@Vgs,Id):20mΩ@10V,9.1A;阈值电压(Vgs(th)@Id):3V@250uA; | 获取价格 | ||
| D2F-T | Omron Electronics Inc-EMC Div | Micro Sw, Spdt, 3A, 125Vac, Th; Microswitch Type:ultra Subminiature; Microswitch Actuator:pin Plunger; Contact Configuration:spdt; Switch Terminals:through Hole; Contact Current Max:3A; Contact Voltage Dc Nom:- Rohs Compliant: Yes | 获取价格 | ||
| 1H05 | HL | 类型:N沟道;漏源电压(Vdss):100V;连续漏极电流(Id):5A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):234mΩ@10V,5A;阈值电压(Vgs(th)@Id):2.8V@250uA; | 获取价格 | ||
| HD840U(CHA) | HL | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| HF25N50 | HL | 类型:N沟道;漏源电压(Vdss):500V;连续漏极电流(Id):25A;功率(Pd):173W;导通电阻(RDS(on)@Vgs,Id):300mΩ@10V,12.5A;阈值电压(Vgs(th)@Id):4V@250uA; | 获取价格 | ||
| HA20N50 | HL | 类型:N沟道;漏源电压(Vdss):500V;连续漏极电流(Id):20A;功率(Pd):110W;导通电阻(RDS(on)@Vgs,Id):340mΩ@10V,10A;阈值电压(Vgs(th)@Id):4V@250uA; | 获取价格 | ||
| HD50N06D(AHI) | HL | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| HF20N50 | HL | 类型:N沟道;漏源电压(Vdss):500V;连续漏极电流(Id):20A;功率(Pd):98W;导通电阻(RDS(on)@Vgs,Id):340mΩ@10V,10A;阈值电压(Vgs(th)@Id):4V@250uA; | 获取价格 | ||
| HA20N60 | HL | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| IAUC100N04S6N015 | Infineon Technologies | 类型:N沟道;漏源电压(Vdss):40V;连续漏极电流(Id):100A;功率(Pd):100W;导通电阻(RDS(on)@Vgs,Id):1.55mΩ@10V,50A;阈值电压(Vgs(th)@Id):3V@150uA; | 获取价格 |
