型号厂商描述数据手册替代料参考价格
CMD80P04LGuangdong Field Effect Semiconductor Co., Ltd.MOSFETs TO252 P-沟道 VDS=40V ID=80A获取价格
CMSA150P03Guangdong Field Effect Semiconductor Co., Ltd.MOSFETs DFN8_5X6MM P-沟道 VDS=30V ID=150A获取价格
CMD75N04Guangdong Field Effect Semiconductor Co., Ltd.MOSFETs TO252 N-沟道 VDS=40V ID=75A获取价格
CMSA80P06Guangdong Field Effect Semiconductor Co., Ltd.MOSFETs P-Channel Bvdss=60V Vgs=±20V Id=80A Pd=95W DFN8_5X6MM获取价格
CMD63P04LGuangdong Field Effect Semiconductor Co., Ltd.获取价格
CMSA30N06TGuangdong Field Effect Semiconductor Co., Ltd.获取价格
CMN3401MGuangdong Field Effect Semiconductor Co., Ltd.获取价格
CMS15N06TGuangdong Field Effect Semiconductor Co., Ltd.获取价格
CMP110N08BGuangdong Field Effect Semiconductor Co., Ltd.获取价格
CMN2N10MGuangdong Field Effect Semiconductor Co., Ltd.获取价格
CMD05N03AGuangdong Field Effect Semiconductor Co., Ltd.获取价格
CMD150P03Guangdong Field Effect Semiconductor Co., Ltd.类型:P沟道;漏源电压(Vdss):30V;连续漏极电流(Id):120A;功率(Pd):130W;导通电阻(RDS(on)@Vgs,Id):6.5mΩ@10V;获取价格
CMD100N03Guangdong Field Effect Semiconductor Co., Ltd.类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):100A;功率(Pd):100W;导通电阻(RDS(on)@Vgs,Id):3.5mΩ;获取价格
CMD30N06ALGuangdong Field Effect Semiconductor Co., Ltd.类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):30A;功率(Pd):40W;导通电阻(RDS(on)@Vgs,Id):40mΩ;获取价格
CMD2922AGuangdong Field Effect Semiconductor Co., Ltd.类型:N沟道;漏源电压(Vdss):100V;连续漏极电流(Id):18A;功率(Pd):75W;导通电阻(RDS(on)@Vgs,Id):85mΩ;获取价格
CMB50N10Guangdong Field Effect Semiconductor Co., Ltd.类型:N沟道;漏源电压(Vdss):100V;连续漏极电流(Id):50A;功率(Pd):100W;导通电阻(RDS(on)@Vgs,Id):17mΩ;获取价格
CMD100N68KGuangdong Field Effect Semiconductor Co., Ltd.类型:N沟道;漏源电压(Vdss):68V;连续漏极电流(Id):100A;功率(Pd):170W;导通电阻(RDS(on)@Vgs,Id):7mΩ@10V;获取价格
CMD50N10Guangdong Field Effect Semiconductor Co., Ltd.类型:N沟道;漏源电压(Vdss):100V;连续漏极电流(Id):50A;功率(Pd):100W;导通电阻(RDS(on)@Vgs,Id):17mΩ;获取价格
CMD85P03AGuangdong Field Effect Semiconductor Co., Ltd.获取价格
CMN5P04MGuangdong Field Effect Semiconductor Co., Ltd.获取价格