找到“TL287ID”相关的规格书共13,883个
| 型号 | 厂商 | 描述 | 数据手册 | 替代料 | 参考价格 |
|---|---|---|---|---|---|
| KNS5610A | KIA | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| BSS87,115 | Rubycon Corporation | 类型:N沟道;漏源电压(Vdss):200V;连续漏极电流(Id):400mA;功率(Pd):580mW;导通电阻(RDS(on)@Vgs,Id):3Ω@10V,400mA;阈值电压(Vgs(th)@Id):2.8V@1mA; | 获取价格 | ||
| AO3416 | HUASHUO SEMICONDUCTOR | 类型:N沟道;漏源电压(Vdss):20V;连续漏极电流(Id):6.5A;功率(Pd):1.4W;导通电阻(RDS(on)@Vgs,Id):22mΩ@4.5V,6.5A;阈值电压(Vgs(th)@Id):1.1V@250uA; | 获取价格 | ||
| HSS2305A | HUASHUO SEMICONDUCTOR | 类型:P沟道;漏源电压(Vdss):20V;连续漏极电流(Id):4.9A;功率(Pd):1.31W;导通电阻(RDS(on)@Vgs,Id):45mΩ@4.5V,4.9A;阈值电压(Vgs(th)@Id):1V@250uA; | 获取价格 | ||
| SI2309CDS-T1-GE3-VB | VBsemi Electronics Co. Ltd | 类型:P沟道;漏源电压(Vdss):60V;连续漏极电流(Id):5.2A;功率(Pd):27W;导通电阻(RDS(on)@Vgs,Id):50mΩ@10V,3.2A;阈值电压(Vgs(th)@Id):2.5V@250uA; | 获取价格 | ||
| AS3415E | FORMOSA MICROSEMI CO. LTD | 类型:P沟道;漏源电压(Vdss):20V;连续漏极电流(Id):4A;功率(Pd):1W;导通电阻(RDS(on)@Vgs,Id):43mΩ@4.5V,4A;阈值电压(Vgs(th)@Id):1V@250uA; | 获取价格 | ||
| UT2305G-AE2-R | Unisonic Technology Co., Ltd. | 类型:P沟道;漏源电压(Vdss):20V;连续漏极电流(Id):4.2A;功率(Pd):830mW;导通电阻(RDS(on)@Vgs,Id):65mΩ@4.5V,4.2A;阈值电压(Vgs(th)@Id):1.2V@250uA; | 获取价格 | ||
| UT2302G-AE2-R | Unisonic Technology Co., Ltd. | 类型:N沟道;漏源电压(Vdss):20V;连续漏极电流(Id):2.4A;功率(Pd):1.25W;导通电阻(RDS(on)@Vgs,Id):95mΩ@2.5V,3.1A;阈值电压(Vgs(th)@Id):450mV@250uA; | 获取价格 | ||
| JSM2302A-A29T | JSMICRO SEMICONDUCTOR | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-;工作温度:-; | 获取价格 | ||
| ATM3400ANSA | Agertech | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| JSM3420 | JSMICRO SEMICONDUCTOR | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| 3410 | Shenzhen Tuofeng Semiconductor Technology Co., Ltd. | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| PMN30XP,115 | Rubycon Corporation | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| PMN52XPX | Rubycon Corporation | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| PMN50EPEX | Rubycon Corporation | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| ME3587 | MATSUKI | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| TDM3420TR | TECHCODE | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):6.3A;功率(Pd):1.6W;导通电阻(RDS(on)@Vgs,Id):23mΩ@10V,8A;阈值电压(Vgs(th)@Id):3V@250μA; | 获取价格 | ||
| SE8831A | SINO-IC | 类型:2个N沟道;漏源电压(Vdss):20V;连续漏极电流(Id):6.1A;功率(Pd):700mW;导通电阻(RDS(on)@Vgs,Id):19.5mΩ@4.5V,6.3A;阈值电压(Vgs(th)@Id):1V@250uA; | 获取价格 | ||
| KO6604 | GUANGDONG KEXIN INDUSTRIAL CO.,LTD | 类型:1个N沟道和1个P沟道;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| HSW8810 | HUASHUO SEMICONDUCTOR | 类型:2个N沟道;漏源电压(Vdss):20V;连续漏极电流(Id):6A;功率(Pd):1.25W;导通电阻(RDS(on)@Vgs,Id):20mΩ@4.5V,4A;阈值电压(Vgs(th)@Id):1.2V@250μA; | 获取价格 |
